HiRel Microelectronics

Standard ICs and ASICs along with Electronic Manufacturing Services (CCA, Radiation Testing, Upscreening and Packaging).

RF Microwave Products

Cobham Microwave Amplifier

Cobham Semiconductor Solutions, A Trusted Supplier, has been providing RF Microwave custom products for over 15 years. Our engagement
models include build to spec and build to print. Components include amplifiers, attenuators, couplers, mixers, power dividers and switches.

Microwave Module Capabilities:

  • Conventional thick/thin film substrate "chip and wire" metal or ceramic packages
  • Analog/Digital circuit design & packaging High temp co-fired ceramic (HTCC) and low temp co-fired ceramic (LTCC) packaging
  • Fluxless flip chip attach on ceramic substrate
  • RF Microwave – GaAs, Si, SiGe, & GaN die attach using DAP vacuum furnace, wire bonding and electrical test
  • ASIC Integration linear, digital, and mixed signal in MCM packages
  • Value added surface mount board assemblies
  • RF and microwave module design, fab and test up to 65 GHz
  • Stand-off Stitch, Substrate Attach, LTCO, Aluminum Nitride Substrate, Microwave Isolation Techniques

Highly Integrated RF Modules:

  • 50 kHz to 15 GHz High Gain Modulator Driver Amplifier
  • Component integration on a single board to reduce size, cost and improve performance
  • Cobham designed & manufactured multilayer thick-film substrate
  • Built in DC Control Circuitry
  • Conductive Walls with Solid Vias under walls to optimize ground and provide superior isolation
  • Co-planar waveguide thin film for Impedance Matching
  • Laser Trimmed Resistors to facilitate active trimming
  • Seam Welded, Hermetic Construction

Features of a Cobham L-Band Low Noise Amplifier:

  • Input Supply Voltage: +4.9 to +5.1 VDC
  • DC Supply Current: 40 mA
  • Amplifier
  • RF Input Power with internal power limiter: +27dBm CW/Peak
  • Baseplate Temperature, Operating & Non-Operating: -55°C to +125°C
  • Noise Figure, 0.5dB 1.400 GHz to 1.427 GHz, from -20°C to +40°C
  • Noise Figure versus Temperature: 0.01 dB/°C
  • Gain: 29 – 31 dB
  • Gain Flatness: 0.1dB from 1.400 GHz to 1.427 MHz
  • Gain Matching (Unit to Unit): -0.5dB to 0.5dB from 1.400 GHz to 1.427 GHz
  • Gain Variation versus Temperature: 0.015 dB/°C
  • Amplifier
  • Phase Linearity: -5 to +5 Degrees from 1.400 GHz to 1.427 GHz
  • Phase Stability vs Temperature: 0.07 Degrees/°C from 1.400 GHz to 1.427 GHz
  • Phase Matching (Unit to Unit): -5 to +5 Degrees from 1.400 GHz to 1.427 GHz
  • Total Output Noise Power: -37dBm from DC to 26GHz when terminated in a 50W input load
  • Output Power at 1dB Compression: +7.5dBm from 1.200 GHz to 1.616 GHz
  • Input / Output VSWR: 1.5:1 from 1.400 GHz to 1.427 GHz
  • Total Ionizing Dose (TID): 100 krad(Si) with dose rates of 0.005 krad(Si)/sec and 50 rad(Si)/sec
  • Single Event Effects (SEE): 37 MeV cm2/mg
  • Single Event Latch-Up (SEL): 75 MeV cm2/mg
  • Dimensions: 1.72" L X 0.70" W X 0.29" H (43.68 mm x 17.78 mm x 7.36 mm)

Typical Screening Levels:

  • Screened & Qualified to the requirements of MIL-PRF-38534 Class K
  • Element Evaluation IAW the requirements of MIL-PRF-38534 Class K
  • Additional Screens include Random Vibration

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