Cobham ASICs for Space & Satellite

Cobham Semiconductor Solutions offers a variety of Digital and Mixed-Signal RadHard ASICs for your HiRel applications.

Cobham RadHard ASICs

Providing your HiRel Databus for HiRel Applications

Cobham Semiconductor Solutions offers a variety of Digital and Mixed-Signal RadHard ASICs for your HiRel applications. We currently offer 90nHBD, 130nHBD, 0.6µm to 0.25µm processes, QML V and QML Q with total ionizing dose rates from 100 krad(Si) to 1 Mrad(Si). Learn more about Cobham's Deep Submicron Process.

The Colorado Springs facility has received the first MIL-PRF-38535 Class Y assembly certification awarded by the Defense Logistics Agency (DLA), Land and Maritime.

Please call us at 800-645-8862 with any questions.

Cobham's Colorado Springs site has been awarded Category 1A Trusted Accreditation for design, packaging/assembly, test and aggregation/brokering of multi-project-wafers by the Defense Microelectronics Activity.

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ASIC News

  • New Class V Certification: Cobham Semiconductor Solutions is the first to receive QML V for their 90nm RadHard-by-Design Library. Read our press release for more information.

Available Cobham RadHard ASIC Products

RadHard ASIC Technologies
Part #
View .pdf files
Type Max
Gates
User
I/O
Pad
Count
I/O
Supply
Voltage
Core
Supply
Voltage
Power
(nW/Gate
-MHz)
NAND2
Type
Prop.
Delay (ps)
Functional
TID
(rads(Si))
Latch up
(MeV/
mg-cm2)
Deep Submicron Process Std
Cell
500M 1752 0.9 - 3.3V 0.6V - 1.1V 0.6-2 @ 0.9V 8.0 100k-300k Contact
Factory
UT90nHBD Std
Cell
50M 1752 2.5,
1.8V
1.0V ± 0.1V 0.2 @ 1.0V 15 @ 1.0V 100k-1M
@ 2.5V
>120 @
125°C
UT130nHBD Std
Cell
15M 1248 3.3,
2.5,
1.8V
1.2V ± 0.1V 3 @ 1.2V 50 @ 1.2V 100k-300k
@ 3.3V
>115 @
125°C
UT0.25µHBD Std
Cell
3M 688 3.3,
2.5,
1.8V
2.5V ± 10%
3.3V ± 10%
40 @ 2.5V
60 @ 3.3V
150 @ 2.5V
200 @ 3.3V
100k-1M
@ 3.3V
>110 @
125°C
UT0.6µCRH Gate
Array
500K 688 5V
and/or
3.3V
3.3V ± 10%
5.0V ± 10%
400 @ 3.3V
1100 @ 5.0V
400 @ 3.3V
250 @ 5.0V
100k-300k
@ 5.0V
>109 @
125°C

Deep Submicron Process

  • Wide ranging standard-cell libraries provide multiple options for optimizing performance or power
  • Standard-cell libraries offer both regular voltage threshold (RVT) and low voltage threshold (LVT) transistors
  • Standard-cell libraries offer both high performance architectures and high density architectures for design optimization
  • Standard-cell libraries offer poly-based cells to modulate the effective channel length of logic transistors to optimize performance or power
  • Standard-cell libraries allow adaptive body biasing by applying a voltage under the ultra-thin buried oxide (BOX) to modify Vt for both LVT and RVT transistors
  • Silicon proven IP: PLL, Process Dependent
  • RadHard SRAM compiler
  • Package Options: UT7152FC flip-chip LGA

UT90nHBD Hardened-by-Design Standard Cell (Qualified 2013)

  • Up to 50,000,000 usable equivalent gates for 1.0V core using structured cell architecture
  • Toggle rates up to 5.0 GHz
  • Advanced 90nm silicon gate CMOS processed in a commercial fab
  • Operating voltage of 2.5V, 1.8V I/O and 1.0V core
  • Multiple product assurance levels available, QML Q and V, military and industrial
  • Radiation hardened from 100 krad(Si) to 1 Mrad(Si)
  • Power dissipation of 0.2nW/MHz/gate at VDDCORE 1.0V and 20% duty cycle
  • We offer Cobham Gaisler LEON3 and other RTL based IP. The complete IP library can be reviewed at www.cobham.com/gaisler

UT130nHBD Hardened-by-Design Standard Cell (Qualified 2011)

  • Up to 15,000,000 usable equivalent gates for 1.2V core using structured cell architecture
  • Toggle rates up to 1.5 GHz
  • Advanced 130nm silicon gate CMOS processed in a commercial fab
  • Operating voltage of 3.3V, 2.5V, 1.8V I/O and 1.2V core
  • Multiple product assurance levels available, QML Q and V, military and industrial
  • Radiation hardened from 100 krad(Si) to 300 krad(Si)
  • Robust Cobham Design Library of cells
  • Power dissipation of 3.6nW/MHz/gate at 1.2V core supply and 20% duty cycle
  • We offer Cobham Gaisler LEON3 and other RTL based IP. The complete IP library can be reviewed at www.cobham.com/gaisler

UT0.25uHBD Hardened-by-Design Structured Array (Qualified 2004)

  • Up to 3,000,000 usable equivalent gate array
  • Toggle rates up to 1000MHz
  • Advanced 0.18u Leff silicon gate CMOS processed in a commercial fab
  • Operating voltage of 3.3V, 2.5V and 1.8V
  • Multiple product assurance levels available, QML Q and V, military and industrial
  • Radiation hardened from 100 krad(Si) to Megarad total dose
  • SEU-immune to less than 1.0E-10 errors/bits-day available using special library cells
  • Robust Cobham Design Library of cells and macros
  • Full complement of industry standard IP cores
  • Configurable RAM compilers
  • Supports cold sparing for power down applications
  • Power dissipation of 0.04uW/MHz/gate at 2.5V and 20% duty cycle
  • We offer Cobham Gaisler LEON3 and other RTL based IP. The complete IP library can be reviewed at www.cobham.com/gaisler

UT0.6uCRH ASIC Family (Qualified 1997)

  • Up to 500,000 usable equivalent gate array
  • Toggle rates up to 150MHz
  • Advanced 0.6u (0.5u Leff) silicon gate CMOS processed in a commercial fab
  • Operating voltage of 5V and 3.3V
  • QML Q and V compliant
  • Commercial RadHard ™ for radiation-tolerance to 300 krad(Si) to meet space requirements and SEU-immune to less than 2.0E-10 errors/bit-day
  • Design support
  • Supports cold sparing for power down applications
  • Supports voltage translations
  • We offer Cobham Gaisler LEON3 and other RTL based IP. The complete IP library can be reviewed at www.cobham.com/gaisler

RadHard Mixed-Signal ASIC capabilities

  • Combines high-density, high-speed digital logic with analog and mixed-signal functions on the same monolithic die.
  • Leverage from our commercial mixed-signal products
  • Turnkey design/translation/emulation
  • Netlist handoff
  • Customer owned tooling
  • We offer Cobham Gaisler LEON3 and other RTL based IP. The complete IP library can be reviewed at www.cobham.com/gaisler