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Aeroflex Colorado Springs offers our QCOTSTM Memories (Quantified Commercial Off-the-Shelf) in 4M, 8M and 16M configurations with various packages (MCM, stacked, shielded) and radiation levels for your aerospace and defense applications.
Aeroflex Colorado Springs' UT9Q512 and the UT9Q512K32 have been replaced with the UT9Q512E
and the UT9Q512K32E.
See the Aeroflex Customer Notification Letter dated 4-07 and 8-07 below for the improvements/differences.
We also offer RadHard Memories with higher radiation levels (visit www.aeroflex.com/RadHardSRAM).
For questions, please call 800-645-8862.
Aeroflex Colorado Springs was again awarded the Northrop Grumman Space Technology 2007 Gold Supplier Award.
UT7Q512 QCOTS 512K 8 SRAM- UT7Q512
- 100 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 5 Volt supply low operating and standby current
- 32 lead ceramic flatpack
- Available to SMD 5962-99606, QML T and Q, RadHard to 30K rad(Si)
UT8Q512 QCOTS 512K 8 SRAM- UT8Q512
- 20 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 3.3-Volt power supply
- 36 lead ceramic package
- Available to SMD 5962-99607, QML T and Q, RadHard to 50K rad(Si)
Legacy UT9Q512 QCOTS 512K 8 SRAM- UT9Q512
- 20 ns access time
- Asynchronous operation compatible with industry standard 512K x 8 SRAM
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 5-Volt supply low operating and standby current
- 36 lead ceramic package
- This product has reached end of life and has been replaced by the UT9Q512E
UT8Q512K32 QCOTS 16Megabit SRAM MCM- UT8Q512K32
- High-performance 2 M byte CMOS static RAM multi-chip module (MCM)
- 25ns access time, 3.3 volt power supply
- MCM contains four (4) 512 x 8 industry-standard asynchronous SRAM's: the control architecture allows operation as 8, 16, 24, or 32-bit data width
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 68-lead ceramic package
- Available to SMD 5962-01533, QML T and Q, RadHard to 50K rad(Si)
Legacy UT9Q512K32 QCOTS 16Megabit SRAM MCM- UT9Q512K32
- High-performance 2 M byte CMOS static RAM multi-chip module (MCM)
- 25ns access time, 5 volt power supply
- MCM contains four (4) 512x8 industry-standard asynchronous SRAM's: the control architecture allows operation as 8, 16, 24, or 32-bit data width
- 68-lead ceramic package
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- This product has reached end of life and has been replaced by the UT9Q51232E
UT8Q1024K8 QCOTS SRAM- UT8Q1024K8 SRAM
- 25ns access time, 3.3 volt power supply
- Dual cavity package contains two(2) 512K x 8 industry-standard asynchronous SRAMs
- TTL compatible inputs, output levels specified for both TTL and CMOS loads, three-state bidirectional data bus
- 44-lead ceramic flatpack package
- Available to SMD 5962-01532, QML T and Q, RadHard to 50K rad(Si)
UT8SDSQ128M8 1G QCOTS SDRAM- UT8SDSQ128M8 SDRAM
- Organized 128M x 8bits
- Single JEDEC standard 3.3V power supply
- 33MHz operation -40o to 85o
- LVTTL compatible with multiplexed address
- Four bank operation
- MRS cycle with address key program
- RadHard to 10krad(Si)
- 54-lead small outline package
UT8SDMQ256M8 2G QCOTS SDRAM- UT8SDMQ256M8 SDRAM
- Organized 256M x 8bits
- Single JEDEC standard 3.3V power supply
- 33MHz operation -40o to TBD
- LVTTL compatible with multiplexed address
- Four bank operation
- MRS cycle with address key program
- RadHard to 10krad(Si)
- 68-lead ceramic bottom brazed quad flatpack package
- News
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